Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
Identifieur interne : 001051 ( Russie/Analysis ); précédent : 001050; suivant : 001052Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
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Abstract
We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot spacing in [100] and [110] direction consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the [100] direction and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced from the diffraction peak shape. © 1997 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction</title><author><name sortKey="Darhuber, A A" uniqKey="Darhuber A">A. A. Darhuber</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut fur Halbleiterphysik, Johannes Kepler Universitat, A-4040 Linz, Austria</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Autriche</country><wicri:regionArea>Institut fur Halbleiterphysik, Johannes Kepler Universitat, A-4040 Linz</wicri:regionArea><wicri:noRegion>A-4040 Linz</wicri:noRegion></affiliation></author><author><name sortKey="Holy, V" uniqKey="Holy V">V. Holy</name></author><author><name sortKey="Stangl, J" uniqKey="Stangl J">J. Stangl</name></author><author><name sortKey="Bauer, G" uniqKey="Bauer G">G. Bauer</name></author><author><name sortKey="Krost, A" uniqKey="Krost A">A. Krost</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institut fur Festkorperphysik, TU-Berlin, D-10623 Berlin, Germany</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut fur Festkorperphysik, TU-Berlin, D-10623 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Heinrichsdorff, F" uniqKey="Heinrichsdorff F">F. Heinrichsdorff</name></author><author><name sortKey="Grundmann, M" uniqKey="Grundmann M">M. Grundmann</name></author><author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. Bimberg</name></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021 Saint Petersburg</wicri:regionArea><wicri:noRegion>194021 Saint Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Kopev, P S" uniqKey="Kopev P">P. S. Kopev</name></author><author><name sortKey="Kosogov, A O" uniqKey="Kosogov A">A. O. Kosogov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Max-Planck-Institut fur Mikrostrukturphysik, D-06120 Halle, Germany</s1><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut fur Mikrostrukturphysik, D-06120 Halle</wicri:regionArea><wicri:noRegion>06120 Halle</wicri:noRegion><wicri:noRegion>D-06120 Halle</wicri:noRegion></affiliation></author><author><name sortKey="Werner, P" uniqKey="Werner P">P. Werner</name></author></titleStmt><publicationStmt><idno type="inist">97-0556935</idno><date when="1997-02-24">1997-02-24</date><idno type="stanalyst">PASCAL 97-0556935 AIP</idno><idno type="RBID">Pascal:97-0556935</idno><idno type="wicri:Area/Main/Corpus">018624</idno><idno type="wicri:Area/Main/Repository">018041</idno><idno type="wicri:Area/Russie/Extraction">001051</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Semiconductor quantum dots</term><term>TEM</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6110</term><term>6855J</term><term>6835C</term><term>8105D</term><term>Etude expérimentale</term><term>Point quantique semiconducteur</term><term>Gallium arséniure</term><term>Indium composé</term><term>Diffraction RX</term><term>Epitaxie jet moléculaire</term><term>TEM</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot spacing in [100] and [110] direction consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the [100] direction and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced from the diffraction peak shape. © 1997 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>70</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction</s1></fA08><fA11 i1="01" i2="1"><s1>DARHUBER (A. 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Ioffe Physical-Technical Institute, 194021 Saint Petersburg, Russia</s1><sZ>9 aut.</sZ></fA14><fA14 i1="04"><s1>Max-Planck-Institut fur Mikrostrukturphysik, D-06120 Halle, Germany</s1><sZ>11 aut.</sZ></fA14><fA20><s1>955-957</s1></fA20><fA21><s1>1997-02-24</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0556935</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. 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